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FGH40N6S2D
July 2002
FGH40N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
General Description
The FGH40N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: * * * * * * Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits
Features
* 100kHz Operation at 390V, 24A * 200kHZ Operation at 390V, 18A * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC * Low Gate Charge . . . . . . . . . 35nC at VGE = 15V * Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical * UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 260mJ * Low Conduction Loss
IGBT (co-pack) formerly Developmental Type TA49340 Diode formerly Developmental Type TA49391
Package
JEDEC STYLE TO-247
E C G
Symbol
C
G
COLLECTOR (BOTTOM SIDE METAL)
E
Device Maximum Ratings TC= 25C unless otherwise noted
Symbol BVCES IC25 IC110 ICM VGES VGEM SSOA EAS PD TJ TSTG Parameter Collector to Emitter Breakdown Voltage Collector Current Continuous, TC = 25C Collector Current Continuous, TC = 110C Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150C, Figure 2 Pulsed Avalanche Energy, ICE = 30A, L = 1mH, VDD = 50V Power Dissipation Total TC = 25C Power Dissipation Derating TC > 25C Operating Junction Temperature Range Storage Junction Temperature Range Ratings 600 75 35 180 20 30 100A at 600V 260 290 2.33 -55 to 150 -55 to 150 mJ W W/C C C Units V A A A V V
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. Pulse width limited by maximum junction temperature.
(c)2002 Fairchild Semiconductor Corporation FGH40N6S2D RevA4
FGH40N6S2D
Package Marking and Ordering Information
Device Marking 40N6S2D Device FGH40N6S2D Package TO-247 Tape Width N/A Quantity 30
Electrical Characteristics TJ = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
BVCES ICES IGES Collector to Emitter Breakdown Voltage IC = 250A, VGE = 0 Collector to Emitter Leakage Current Gate to Emitter Leakage Current VCE = 600V VGE = 20V TJ = 25C TJ = 125C 600 250 2.0 250 V A mA nA
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage VEC Diode Forward Voltage IC = 20A, VGE = 15V IEC = 20A TJ = 25C TJ = 125C 1.9 1.7 2.2 2.7 2.0 2.6 V V V
Dynamic Characteristics
QG(ON) VGE(TH) VGEP Gate Charge Gate to Emitter Threshold Voltage Gate to Emitter Plateau Voltage IC = 20A, VCE = 300V VGE = 15V VGE = 20V 3.5 35 45 4.3 6.5 42 55 5.0 8.0 nC nC V V
IC = 250A, VCE = VGE IC = 20A, VCE = 300V
Switching Characteristics
SSOA td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF trr Switching SOA Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 2) Turn-On Energy (Note 2) Turn-Off Energy (Note 3) Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 2) Turn-On Energy (Note 2) Turn-Off Energy (Note 3) Diode Reverse Recovery Time IEC = 1A, dIEC/dt = 200A/s IEC = 20A, dIEC/dt = 200A/s IGBT and Diode at TJ = 125C ICE = 20A, VCE = 390V, VGE = 15V, RG = 3 L = 200H Test Circuit - Figure 26 TJ = 150C, VGE = 15V, RG = 3 L = 100H, VCE = 600V IGBT and Diode at TJ = 25C, ICE = 20A, VCE = 390V, VGE = 15V, RG = 3 L = 200H Test Circuit - Figure 26 100 8.0 10 35 55 115 200 195 14 18 68 85 115 380 375 30 39 260 85 105 450 600 35 48 A ns ns ns ns J J J ns ns ns ns J J J ns ns
Thermal Characteristics
RJC
NOTE: 2. Values
Thermal Resistance Junction-Case
IGBT Diode
-
-
0.43 1.25
C/W C/W
for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in figure 26.
3. Turn-Off
Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
FGH40N6S2D RevA4
(c)2002 Fairchild Semiconductor Corporation
FGH40N6S2D
Typical Performance Curves
90 PACKAGE LIMITED 80 ICE , DC COLLECTOR CURRENT (A) 70 60 50 40 30 20 10 0 25 50 75 100
TJ = 25C unless otherwise noted
125 ICE, COLLECTOR TO EMITTER CURRENT (A) TJ = 150oC, RG = 3 VGE = 15V, L = 100H , 100
75
50
25
0 125 150 0 100 200 300 400 500 600 700 TC , CASE TEMPERATURE (oC) VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 1. DC Collector Current vs Case Temperature
1000 TC = 75oC fMAX, OPERATING FREQUENCY (kHz)
Figure 2. Minimum Switching Safe Operating Area
13 tSC , SHORT CIRCUIT WITHSTAND TIME (s) VCE = 390V, RG = 3 TJ = 125oC , 11
500 ISC, PEAK SHORT CIRCUIT CURRENT (A) 2.4
450
100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) 10 PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RJC = 0.27oC/W, SEE NOTES
VGE = 15V
9 ISC 7
400
350
VGE = 10V
5 tSC 3
300
TJ = 125oC, RG = 3, L = 200H, V CE = 390V 1 1 10 30 60 ICE, COLLECTOR TO EMITTER CURRENT (A)
250 9 10 11 12 13 14 15 16 VGE , GATE TO EMITTER VOLTAGE (V)
Figure 3. Operating Frequency vs Collector to Emitter Current
40 ICE, COLLECTOR TO EMITTER CURRENT (A) 35 30 25 20 15 10 TJ = 150oC 5 TJ = 125oC 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TJ = 25oC PULSE DURATION = 250s ICE, COLLECTOR TO EMITTER CURRENT (A) DUTY CYCLE < 0.5%, VGE =10V
Figure 4. Short Circuit Withstand Time
40 DUTY CYCLE < 0.5%, VGE =15V 35 30 25 20 15 10 TJ = 150oC 5 TJ = 125oC 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TJ = 25oC PULSE DURATION = 250s
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
(c)2002 Fairchild Semiconductor Corporation
FGH40N6S2D RevA4
FGH40N6S2D
Typical Performance Curves
1400 RG = 3 L = 200H, VCE = 390V , EON2 , TURN-ON ENERGY LOSS (J)
TJ = 25C unless otherwise noted
1400 RG = 3 L = 200H, VCE = 390V , EOFF, TURN-OFF ENERGY LOSS (J) 1000
1200 1000 800 600 400 200 0 0 5 10 15 TJ = 25oC, TJ = 125oC, VGE = 15V 20 25 30 35 40 TJ = 25oC, TJ = 125oC, VGE = 10V
800 TJ = 125oC, VGE = 10V, VGE = 15V 600
400
200 TJ = 25oC, VGE = 10V, VGE = 15V 0 0 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 7. Turn-On Energy Loss vs Collector to Emitter Current
20 RG = 3 L = 200H, VCE = 390V , td(ON)I, TURN-ON DELAY TIME (ns) 16 TJ = 25 C, TJ = 125 C, VGE = 10V 12
o o
Figure 8. Turn-Off Energy Loss vs Collector to Emitter Current
60 RG = 3 L = 200H, VCE = 390V , 50
trI , RISE TIME (ns)
40
30 TJ = 25oC, TJ = 125oC, VGE = 10V 20
8 TJ = 25oC, TJ = 125oC, VGE = 15V 4
10 TJ = 25oC, TJ = 125oC, VGE =15V
0 0 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A)
0 0 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 9. Turn-On Delay Time vs Collector to Emitter Current
80 RG = 3 L = 200H, VCE = 390V , td(OFF)I , TURN-OFF DELAY TIME (ns) 70
Figure 10. Turn-On Rise Time vs Collector to Emitter Current
100 RG = 3 L = 200H, VCE = 390V , 90
60 VGE = 10V, VGE = 15V, TJ = 125oC 50
tfI , FALL TIME (ns)
80
TJ = 125oC, VGE = 10V, VGE = 15V
70
40
60
30 VGE = 10V, VGE = 15V, TJ = 25oC 20 0 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A)
50 TJ = 25oC, VGE = 10V, VGE = 15V 40 0 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 11. Turn-Off Delay Time vs Collector to Emitter Current
Figure 12. Fall Time vs Collector to Emitter Current
(c)2002 Fairchild Semiconductor Corporation
FGH40N6S2D RevA4
FGH40N6S2D
Typical Performance Curves
200 ICE, COLLECTOR TO EMITTER CURRENT (A) 175 150 125 100 75 TJ = 25oC 50 TJ = 125oC 25 0 3 4 5 6 7 8 9 TJ = -55oC DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250s
TJ = 25C unless otherwise noted
16 IG(REF) = 1mA, RL = 15 14 VGE, GATE TO EMITTER VOLTAGE (V) 12 VCE = 600V 10 VCE = 400V 8 6 4 VCE = 200V 2 0 10 11 12 0 5 10 15 20 25 30 35
VGE, GATE TO EMITTER VOLTAGE (V)
QG , GATE CHARGE (nC)
Figure 13. Transfer Characteristic
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) TJ = 125oC, L = 200H, VCE = 390V, VGE = 15V 2.0 ETOTAL = EON2 + EOFF ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) 2.4 100
Figure 14. Gate Charge
TJ = 125oC, L = 200H, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF
1.6
ICE = 40A
10
1.2
ICE = 40A 1 ICE = 20A ICE = 10A
0.8
ICE = 20A
0.4 ICE = 10A 0 25 50 75 100
o
125
150
0.1 1.0
10
100
1000
TC , CASE TEMPERATURE ( C)
RG, GATE RESISTANCE ()
Figure 15. Total Switching Loss vs Case Temperature
3.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FREQUENCY = 1MHz 2.5 C, CAPACITANCE (nF)
Figure 16. Total Switching Loss vs Gate Resistance
4.0 DUTY CYCLE < 0.5% PULSE DURATION = 250s 3.6
2.0 CIES 1.5
3.2
2.8 ICE = 40A 2.4 ICE = 20A 2.0 ICE = 10A 1.6 6 7 8 9 10 11 12 13 14 15 16
1.0
COES
0.5 CRES 0.0 0 20 40 60 80 100 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 17. Capacitance vs Collector to Emitter Voltage
Figure 18. Collector to Emitter On-State Voltage vs Gate to Emitter Voltage
(c)2002 Fairchild Semiconductor Corporation
FGH40N6S2D RevA4
FGH40N6S2D
Typical Performance Curves
50 45 IEC , FORWARD CURRENT (A) 40 35 30 125oC 25 20 15 10 5 0 0 0.5 1.0 1.5 2.0 2.5 25oC DUTY CYCLE < 0.5% PULSE DURATION = 250s
TJ = 25C unless otherwise noted
250 dIEC/dt = 200A/s, VCE = 390V trr, REVERSE RECOVERY TIMES (ns) 200 125oC tb 150 25oC trr 100 25oC tb 50 125oC ta 25oC ta 2 4 6 8 10 12 14 16 18 20 125oC trr
0 3.0 3.5 VEC , FORWARD VOLTAGE (V) IEC , FORWARD CURRENT (A)
Figure 19. Diode Forward Current vs Forward Voltage Drop
200 IEC = 20A, VCE = 390V ta, tb, REVERSE RECOVERY TIMES (ns) 175 150 125 100 75 50 25 25oC ta 0 200 300 400 500 600 700 800 900 1000 dIEC/dt, RATE OF CHANGE OF CURRENT (A/s) 125oC ta 25oC tb 125oC tb
Figure 20. Recovery Times vs Forward Current
900 Qrr , REVERSE RECOVERY CHARGE (nC) VCE = 390V 800 700 600 500 400 25oC, IEC = 20A 300 200 100 200 300 400 500 600 700 800 900 1000 dIEC/dt, RATE OF CHANGE OF CURRENT (A/s) 25oC, IEC = 10A 125oC, IEC = 10A 125oC, IEC = 20A
Figure 21. Recovery Times vs Rate of Change of Current
S, REVERSE RECOVERY SOFTNESS FACTOR 6 VCE = 390V, TJ = 125oC 5
Figure 22. Stored Charge vs Rate of Change of Current
IRRM, MAX REVERSE RECOVERY CURRENT (A) 20 VCE = 390V, TJ = 125oC 18 16 14 IEC = 20A 12 10 IEC = 10A 8 6 200 300 400 500 600 700 800 900 1000 dIEC/dt, CURRENT RATE OF CHANGE (A/s)
4 IEC = 20A 3
2 IEC = 10A 1
0 200 300 400 500 600 700 800 900 1000 dIEC/dt, CURRENT RATE OF CHANGE (A/s)
Figure 23. Reverse Recovery Softness Factor vs Rate of Change of Current
Figure 24. Maximum Reverse Recovery Current vs Rate of Change of Current
(c)2002 Fairchild Semiconductor Corporation
FGH40N6S2D RevA4
FGH40N6S2D
Typical Performance Curves
TJ = 25C unless otherwise noted
ZJC , NORMALIZED THERMAL RESPONSE
10o 0.50
0.20 0.10 10-1 0.05 0.02 0.01 10-2 10-5 SINGLE PULSE 10-4 10-3 10-2 10-1 PD
t1
t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC
100
101
t1 , RECTANGULAR PULSE DURATION (s)
Figure 25. IGBT Normalized Transient Thermal Impedance, Junction to Case
Test Circuit and Waveforms
FGH40N6S2D DIODE TA49391 90% 10% EON2 L = 200H VCE RG = 3 90% + FGH40N6S2D VDD = 390V ICE 10% td(OFF)I tfI trI td(ON)I EOFF
VGE
Figure 26. Inductive Switching Test Circuit
Figure 27. Switching Test Waveforms
(c)2002 Fairchild Semiconductor Corporation
FGH40N6S2D RevA4
FGH40N6S2D
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gatevoltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 27. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by P C = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 27. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turnon and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0)
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
(c)2002 Fairchild Semiconductor Corporation
FGH40N6S2D RevA4
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop
DISCLAIMER
ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR
SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFETa VCX
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I1

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